20N60A4 v, SMPS Series N-channel Igbts. The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs. Datasheet Transistor 20n60a4 – Download as PDF File .pdf) or read online. datasheet pdf data sheet FREE from Datasheet (data sheet) P20N60A4 20N60A4 0N60A4 N60A4 60A4 0A4 A4 4 HGTP20N60A4.
|Published (Last):||12 July 2013|
|PDF File Size:||19.99 Mb|
|ePub File Size:||17.44 Mb|
|Price:||Free* [*Free Regsitration Required]|
These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.
When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means – for example, with a metallic wristband.
The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.
20N60A4 PDF Datasheet浏览和下载
IGBTs can be handled safely if the following basic precautions are taken: Devices should never be inserted into or removed from. Devices should never be inserted into or removed from circuits with power on.
Prior to assembly into a circuit, all leads should be kept. Operating Frequency Information Operating frequency information for a typical device Figure 3 is presented as a guide for estimating device performance datasueet a specific application. Device turn-off delay can establish datasheeg additional frequency limiting condition for an application other than T JM.
Home – IC Supply – Link.
The operating frequency plot Figure 3 of a typical. Circuits that leave the gate.
When handling these devices. All tail losses are included in the datashset for E OFF ; i. Tips of soldering irons should be grounded.
With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. Device turn-off delay can establish an additional frequency.
20N60A4 datasheet, 20N60A4 datasheets, manuals for 20N60A4 electornic semiconductor part
With proper handling and application. Insulated Gate Bipolar Transistors are susceptible to. Gate Protection – These devices do not have an internal monolithic Zener diode from gate to emitter. Other definitions are possible. Other typical frequency vs collector current I CE plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and Operating frequency information for a typical device.
Gate Termination – The gates of these devices are essentially capacitors.
The information is based on measurements of a. Figure 3 is presented as a guide for estimating device. All tail losses are included in the.
The sum of device switching and conduction losses must not exceed P D. If gate protection is required an external Zener is recommended.
20N60A4 Datasheet catalog
Exceeding the rated V GE can result in 20m60a4 damage to the oxide layer in the gate region. Circuits that leave the gate open-circuited or floating should be avoided.
When devices are removed by hand from their carriers. The sum of device switching and conduction losses must not.