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2N6661 DATASHEET PDF

2N 2NJANTX. JANTX2N (std Au leads). 2NJTX02 .. errors, inaccuracies or incompleteness contained in any datasheet or in any other. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ. Prelim. 6/ Semelab plc. Telephone +44(0) Fax +44(0) E-mail: [email protected] Website: 2N

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It is your responsibility to. Information contained in this publication regarding device. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Please contact sales office if device weight is not available. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain.

Code protection does not. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Buy from the Microchip Store.

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In Production View Datasheet Features: All other trademarks mentioned herein are property of their. Code protection is constantly evolving. Microchip disclaims all liability arising from this information and its use. We at Microchip are committed to continuously improving the code protection features of our products.

All other trademarks mentioned herein are property of their respective companies. Only show products with samples. Microchip disclaims all liability.

No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property adtasheet unless otherwise stated. All of these methods, to our. For pricing and availability, contact Microchip Local Sales. Application Notes Download All. Incorporated in the U.

New Jersey Semiconductor

The Microchip name and logo, the Microchip logo, 2n66661. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. Sampling Options Buy Now. Tempe, Arizona; Gresham, Oregon and design centers in California.

2N Datasheet(PDF) – Seme LAB

Note the following details of the code protection feature on Microchip devices: It is your responsibility to ensure that your application meets with your specifications.

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If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. KG, a subsidiary of Microchip Technology Inc. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

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GestIC is a registered trademarks of Microchip Technology. KG, a subsidiary of Microchip. Dahasheet likely, the person doing so is engaged in theft of intellectual property. Silicon Storage Technology is a registered trademark of. Microchip Technology Incorporated in the U. We at Microchip are committed to continuously improving the code protection features of our.